| 摘要 |
<p>Selective wet or plasma anodization is utilized for forming a relatively thick dielectric layer (34) only at the bottoms of trenches (10) included in semiconductor, integrated devices. In that way, the electrical characteristics of trenches that include bottoms having surface roughness and/or sharp or irregular corners are significantly improved. Additionally, electrically isolated capacitor structures in elongated trenches are made feasible.</p> |
