| 摘要 |
<p>PURPOSE:To improve the moisture resistance by allowing a passivation film in a lattice shape to remain in a hole. CONSTITUTION:After an insulating layer 2 of silicon dioxide is formed on a silicon substrate 1, a diffused layer for forming a transistor, a diode is formed, a thin metal film of aluminum is then formed, a metal wiring layer 3 is formed by a photoetching method, and a bonding pad 4 is similarly formed. Then, a passivation film 5 such as a CVD-SiO2 film or CVD-PSG film is formed, and a lattice-like hole 6 is formed by a photoetching method. Thus, the passivation film is allowed to remain on the bonding pad to increase the bondability of the pad to the molding resin, thereby significantly improving the moisture resistance.</p> |
