| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive method of manufacturing an insulation layer having higher insulation characteristic within a semiconductor substrate with a reduced number of processes. SOLUTION: A mask pattern 14 is formed on a semiconductor substrate 11, and oxygen ions 15 are implanted from the upper side of the substrate. The oxygen ions 16b implanted directly into the substrate reaches deep region of substrate, and oxygen ions 16a implanted via the mask pattern are located in the region near the substrate surface. After the ion implantation, the heat treatment is executed to form a silicon dioxide film as the insulation layer. A single-crystal silicon region at the upper part of the oxygen ions 16b becomes a circuit element region, and the desired circuits are formed in the following processes.
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