Chemical vapor deposition method and apparatus

摘要

A chemical vapor deposition apparatus particularly useful for forming uniformly thick epitaxial layers of III-V semiconductor compounds on a plurality of substrates comprises a susceptor for supporting the substrates contained within a housing, gas inlet and outlet ports including a plurality of gas inlet ports spaced around the periphery of the housing and wherein the susceptor is provided with a plurality of helical flights extending from top to bottom which control the gas flow pattern.