发明名称 |
Semiconductor read-only memory device |
摘要 |
A semiconductor read-only memory device includes first and second MOS field effect mode transistors (MOSFET) as memory elements storing either one of binary values of binary information. The first MOSFET has such a relatively long effective gate length that it becomes conductive upon receipt of a first relatively high gate voltage applied thereto as a memory selection signal and becomes non-conductive upon receipt of a second relatively low gate voltage. The second MOSFET, on the other hand, has such a relatively short effective gate length that it becomes conductive whether the first or second gate voltage is applied thereto.
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申请公布号 |
US4639892(A) |
申请公布日期 |
1987.01.27 |
申请号 |
US19830556387 |
申请日期 |
1983.11.30 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MIZUGAKI, SHIGEO;UMEKI, TSUNENORI |
分类号 |
G11C17/00;G11C17/12;G11C17/16;H01L21/8246;H01L27/112;H01L29/78;(IPC1-7):G11C11/40 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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