| 摘要 |
PURPOSE:To improve capacitance and dielectric strength distribution of a capacitor by a method wherein a polycrystalline silicon film is deposited and selectively oxidized to form an element separation region. CONSTITUTION:A silicon dioxide film 113 and a polycrystalline silicon film 114 are deposited on a P-type silicon substrate 101 and a silicon dioxide film 115 and a silicon nitride film 116 are formed and a photoresist 117 is patterned by using the first mask in which a separation region is formed. The silicon nitride film 116 and the silicon dioxide film 115 are etched by using the photoresist 117 as a mask. Boron ions B<+> are implanted from the top surface of the polycrystalline silicon film 114 and implanted layers 103A are formed to form channel stoppers. Then, the photoresist film 117 is stripped off, after the exposed polycrystalline silicon film 114 is selectively oxidized and the silicon nitride film 116 and the silicon dioxide film 115 are removed, unoxidized polycrystalline silicon and the insulation film 13 are removed to expose the surface of the silicon substrate 101 and arsenic ions are implanted to form an N<+> region 106. |
