| 摘要 |
PURPOSE:To reduce the number of steps by providing a fine groove at an insulating film on a semiconductor substrate, and using a fuse except the fine aluminum wirings only in the grooves, thereby eliminating the formation of a fuse due to different metal. CONSTITUTION:An Si substrate is separated at elements 15, a collector 18, a base 17 and an emitter 16 are provided, a hole is opened at an SiO2 film 21, and a polysilicon wiring film 11 is formed. The fine holes of a resist mask 22 is dry etched to form a fine groove 23. The mask is removed, an aluminum film 10 1mum thick is adhered to fill the groove 23. Then, a resist mask is placed and aluminum is dry-etched in high vacuum to form wirings 10. In this case, the aluminum simultaneously remains in the groove 23 to form a fuse 20 made of fine wirings. According to this configuration, a fuse of different metal is not necessarily provided separately to reduce the number of steps. |
