| 摘要 |
PURPOSE:To simplify the manufacture, to apply a back surface potential of high reliability and to enable a back surface grounding by forming an aluminum or aluminum alloy coating layer on a semiconductor element placing portion on a ceramic substrate. CONSTITUTION:An aluminum or aluminum alloy layer is formed on a conductive element bonding layer 20 and the connecting portion of leads, and all wiring portions are formed of aluminum or aluminum alloy. In other words, wirings from a semiconductor element 1 to leads 5 are all formed of the same or same type of material, monometallic or bonding type similar thereto. Thus, the formation of brittle intermetallic compound is avoided, and an automatic wire bonding step using an automatic wire bonder is enabled. To form the aluminum coating layer, it is advantageous to utilize an ion plating method or a sputtering method to form the aluminum coating layer without separation.
|
