| 摘要 |
PURPOSE:To grow an SiC layer having good bondability by CVD-reacting with H2 gas as carrier while regulating the ratio of SiHCl2 to SiCH3Cl3 or Si(CH3)3 Cl of reaction gas. CONSTITUTION:The flow rate of SiCH3Cl3 or Si(CH3)3Cl is initially set to zero on an Si substrate 1, and only SiHCl3 is epitaxially grown as reaction gas to grown an Si layer 2. Then, the flow rate of the SiCH3Cl3 or Si(CH3)3Cl is raised as time goes, thereby eventually growing an SiC layer 3. Thus, a transferring layer which gradually transfers from the layer 2 to the layer 3 is formed to epitaxially grow the layer 3 having good bondability. Thus, the mass-production of SiC growth can be performed. |
