| 摘要 |
PURPOSE:To facilitate processing with relatively low skill by fixing a diffraction multiple ring for light convergence to a predetermined position corresponding to a light emission region which is a part of a plurality of epitaxial regions. CONSTITUTION:A diffraction multiple ring 10A for light convergence, which is provided on a substrate 1 and functions practically as a lens, has a forbidden band width narrower than that of an activation layer 4. Therefore, it is formed by removing unnecessary parts with precision processing technology after an epitaxial layer of P-type InGaAs, which does not transmit an induced light, is made to grow. In this example, InGaAs semiconductor, which has a forbidden band width just absorbing the induced light, is employed to form the diffraction multiple ring 10A for light convergence. However, any material which does not transmit the induced light, for instance, metal may be employed. As the light is emitted isotropically from a light emission region 12, the diffraction multiple ring 10A for light convergence may be formed at any position. However, it is recommended to provide the multiple ring 10A on one of four side planes which are defined by the surface substrate 1 of the outermost region of a plurality of epitaxial regions 2-7 and the epitaxial regions 2-7. |
