| 摘要 |
PURPOSE:To obtain the titled extremely high-purity crystal by introducing the vapor of alkylated bismuth or metallic bismuth into a heated reaction vessel along with the vapor of an org. compd. of other metallic ions constituting the crystal and allowing the vapors to react with gaseous oxygen. CONSTITUTION:An Al2O3 crucible 3 contg. metallic Bi 2 is placed in a quartz tube 1 and a substrate 5 is placed on a substrate carrier 4. Gaseous Ar is introduced from a gaseous Ar inlet 6 to form an inert atmosphere in the quartz tube 1 and the metallic Bi 2 and the substrate 5 are heated by an electric furnace 7. When the temp. in the furnace is made constant, gaseous O2 and the raw gas are respectively introduced from a gaseous O2 inlet 8 and a raw gas inlet 9 and crystal growth is started. A Bi-contg. oxide single crystal is obtained on the substrate. By this method, the mixing of impurities from the crucible is completely eliminated and extremely high-purity raw gas can be easily utilized. Accordingly, the titled single crystal such as Bi12SiO20 and Bi12GeO20 having excellent electro-optical and magneto-optical characteristics and which are used for an image processing optical device, an optical arithmetic element, a magneto-optical element, etc., can be obtained.
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