| 摘要 |
PURPOSE:To produce a stable deposited film product at a low cost by changing the relative positional relation between a high-frequency electromagnetic field and a substrate in a deposited film forming device by a plasma CVD method. CONSTITUTION:A raw gas is supplied from a feed pipe 2 into a vacuum vessel 1 having a reaction space A and discharged from a discharge pipe 9. Meanwhile, a high-frequency wave or a microwave generated in a high-frequency or a microwave electric power source 3 is radiated into the reaction space A through a waveguide 4 from a transmission window 5. Consequently, a thin film is formed on a substrate 6 on a holding stage 7 provided a heating means 8. When the film is deposited, the holding stage 7 is intermittently or continuously oscillated by a vibrator 10 in the horizontal direction. Accordingly, the intensity of the electric field is made uniform over the whole surface of the substrate with time quadrature, the film deposited on the substrate surface becomes uniform and homogeneous and a desired deposited film having excellent characteristics is obtained. |
