| 摘要 |
PURPOSE:To improve the integration of a semiconductor memory with reduced area of a memory cell by a method wherein a storage capacity is cubically arranged at least on the gate of a switching transistor, and information is directly written and read from a capacitive terminal for storing the information arranged cubically. CONSTITUTION:An oxide film 13 and a gate oxide film 17 are provided on a semiconductor substrate 12, impurities are diffused into the substrate 12 from a small hole 23 provided on the gate oxide film 17, or the ion-implantation, etc. is performed to provide a region consisting of a conductive type diffusion layer 11 that differs from the substrate 12. Then, a region consisting of the same conductive type diffusion layer 8 (drain) as the substrate is formed. After that, a conductive layer consisting of an electrode 9 for forming a storage capacitance which directly contacts with the diffusion layer 8 through the small hole 23 is provided so that a conductive layer consisting of Al electrode 18 on both sides of an insulation film 10 is provided to form a storage capacitance with the electrodes 9 and 18 and the insulation film 10. Moreover, in this case, the Al electrode 18 acts as a data line. |
