| 摘要 |
PURPOSE:To obtain a photoelectric conversion function without heating by forming a thin-film displaying a first conduction type through the glow discharge decomposition of a silicon hydride, a thin-film having optical activity and a thin-film displaying a second conduction type onto a base body in succession while the main surfaces of the formation of the thin-films are irradiated with beams. CONSTITUTION:A glass substrate to which a first transparent electrode is formed is fed into a substrate feed-in chamber connected to a glow discharge chamber, heated and transported to a forming chamber for a thin-film displaying a first conduction type, and the substrate is irradiated by beams having a wavelength of 200nm or more and glow discharge is started. The thin-film displaying the first conduction type having required thickness is shaped, and transferred to a forming chamber for an optical active thin-film. An optical active layer is formed by decomposing a substance such as disilane or disilane diluted by hydrogen or helium as an silicon hydride. The formation pressure of the optical active layer preferably extends over 0.1-1Torr and a formation temperature thereof over 10-250 deg.C. I-type semiconductors having required thickness are laminated completely, and the thin-film is carried to the forming chamber for the thin-film displaying the second conduction type. |
