| 摘要 |
PURPOSE:To reduce the error even when a plurality of times of alignment are performed by a method wherein the third mark is formed on the object of transfer with the second mark as a target when the pattern of the positioned first mark is transferred, and the positioning of the object of transfer and the pattern of the second mark is performed utilizing the relative positional relation of the second mark on the object of transfer and the third mark. CONSTITUTION:When the largest error is generated on the second pattern P2 of the second mask M2 and the pattern CP1 on the wafer W, the amount of displacement becomes the alignment error (d). Then, in the second alignment process (indicated by the arrow F4 in the diagram), the alignment of the third mask M3 is performed for the wafer W (diagram D) whereon after alignment marks K0-K2 are formed. At this time, the positioning of the mask alignment mark of the third mask M3 is performed for the average position or the intermediate position of wafer alignment masks K1-K2, namely, at the position of the error d/2. As an alignment operation is performed on the center of wafer alignment marks K1 and K2, the alignment error of the third pattern P3 for the first pattern P1 and the second pattern P2 becomes the maximum of d/2+d=3d/2 at the greatest. |
