| 摘要 |
PURPOSE:To obtain a highly reliable a-Si TFT by using, as the insulating film contacting with the semiconductor layer, a silicon nitride film prepared by the plasma chemical vapor phase deposition process and having a specific optical energy band gap, thereby improving the film quality of the SiNX film. CONSTITUTION:As the insulating film contacting with the semiconductor layer, an SiNX film prepared by the plasma chemical vapor phase deposition process and having an optical energy band gap of a value greater than 4.9eV is used. For instance, a conductor such as Cr, MOSi2 is selectively formed on an insulating substrate 3 as a gate electrode 4, an SiNX film by the high-frequency plasma chemical vapor phase deposition process as a gate insulating film 1 and an a-Si film by the same plasma chemical vapor phase deposition process as a semiconductor layer 2 are successively deposited, and the a-Si film is selectively removed, forming an island pattern 2 of a-Si film. An N<+> type a-SiiH film 7 containing an impurity such as phosphorus is selectively left between the a-Si film pattern 2 and the source-drain electrodes 5, 6 consisting of a conductor such as Al, MoSi2, thereby producing a-Si TFT. |
