发明名称 METHOD AND DEVICE FOR DEVELOPING OF RESIST PATTERN
摘要 PURPOSE:To form a highly precise pattern at a high through-put by a method wherein an electrode is provided opposite to the surface of a substrate, a developing solution is poured between the surface of the substrate and the electrode, a developing treatment is started, and the period of time of the developing treatment is determined from the value of current running between the electrode and the substrate when said developing treatment is performed. CONSTITUTION:When a developing work is started after a developing solution is filled up between an electrode 2 and a substrate 1, output voltage is kept on dropping until the time t=0-tS, Cr appears in the developing solution at the time of t=tS, superconductive power is generated by an electrochemical reaction, and the output voltage is kept on boosting. At this point, if the optimum developing time (tS) is measured using the substrate to be used for a testing, the optimum result of developing can be obtained by developing for the period of time of DELTAt=tE-tS after the appearance of Cr. The current between the substrate 1 and the electrode part 2 is measured by a current-measuring device 3, and the measured value is given to a data processing circuit 14. The developing test is performed by the above-mentioned system, a number of DELTAt are memorized as a table in the central controlling circuit 15, and an automatic developing operation can be performed by calculating the table of DELTAt in each condition.
申请公布号 JPS6216523(A) 申请公布日期 1987.01.24
申请号 JP19850156391 申请日期 1985.07.16
申请人 TOSHIBA CORP 发明人 SHIGEMITSU FUMIAKI
分类号 H01L21/30;G03F7/00;G03F7/30;H01L21/027 主分类号 H01L21/30
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