| 摘要 |
PURPOSE: A method for manufacturing an isolation layer in a semiconductor device is provided to be capable of preventing generation of voids when filling an ozone-TEOS(Tetra Ethyl Ortho Silicate) oxide layer in a trench. CONSTITUTION: A pad oxide pattern(2) and the first nitride pattern(3) are sequentially formed to expose an isolation region of a semiconductor substrate(1). The second nitride spacer(4) is formed at both sidewalls of the first nitride pattern(3) and the pad oxide pattern(2). A trench is formed by etching the exposed substrate. A thermal oxide layer(7) is formed by thermal oxidation. The surface of the resultant structure is damaged by plasma processing. An ozone-TEOS layer(8) as an isolation layer is deposited on the entire surface of the resultant structure.
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