发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To attain a stable writing operation by inserting a resistance between an emitter of a final step transistor of a word driver circuit selecting a word line and an electrode of the lowest potential. CONSTITUTION:A resistance Rw is inserted between word drivers WD1, WD2 and an electrode of the lowest potential. A Tr Q5 absorbs a current 67mA passing through a word line W2 and when adding its base current, an emitter current of the Tr Q5 becomes 70mA. When determining Rw so as to satisfy 2V+70mAXRwOMEGA=3.3V, an emitter potential of Q1 is raised to 2V+70 mAXRwOMEGA, which can be same as the base potential of Q1. Rw becomes 18.5OMEGA and by inserting 18.5OMEGA between the emitter of a final step transistor of a word driver and an electrode of the lowest potential, Q1 is prevented from being turned on. Thereby, the effect of a parasitic transistor is restricted and a stable writing operation can be performed.
申请公布号 JPS6214396(A) 申请公布日期 1987.01.22
申请号 JP19850153804 申请日期 1985.07.12
申请人 NEC CORP 发明人 HAMADA MITSUHIRO
分类号 G11C17/14;G11C17/06;H01L21/8229;H01L27/10;H01L27/102 主分类号 G11C17/14
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