| 摘要 |
Thin film transistor arrays are prepared by a vacuum deposition technique wherein only a single deposition of discrete areas of an insulating material are deposited through a mask. No registration is required to form the various elements of the transistors. A unique structure is described wherein the contact of the semiconductor material with the source electrode, the source bus conductors, and the drain electrode is coterminous with conductive material forming the source electrode and bus conductors and the drain electrode. |
