发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To improve the anti-dryetching property of the titled composition by compounding a quinone diazide compd. and a cresol-formaldehyde novolak resin having a prescribed condition in a ratio of 1:(4-7). CONSTITUTION:The cresol-formalde novolak resin which is a relatively high polymer and has a weight average molecular weight of 10,000-25,000 is obtd. by using an acidic catalyst from a starting material of m, p mixed cresols having a compounding ratio of m-cresol/p-cresol of 50/50-80/20. The compounding ratio of the quinone diazide compd. and the cresol formaldehyde novolak resin is a specific range of 1:(4-7). Thus, the titled composition having the excellent heat-resisting and anti-dryetching properties, maintaining the high sensitivity is obtd.
申请公布号 JPS6214148(A) 申请公布日期 1987.01.22
申请号 JP19850153296 申请日期 1985.07.11
申请人 SUMITOMO CHEM CO LTD 发明人 FURUTA AKIHIRO;HANABATAKE MAKOTO;KONISHI SHINJI;KURATA NOBUYUKI;HORIKAWA YASUHIKO
分类号 C08L61/04;C08K5/28;C08L61/00;C08L61/06;G03C1/72;G03F7/022 主分类号 C08L61/04
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