发明名称 |
INSULATED-GATE FIELD-EFFECT TRANSISTOR CIRCUIT FOR A ONE OUT OF N SYSTEM |
摘要 |
The circuit provides a signal (a) at the application of an interrogation pulse (as) if a change of state has occurred in a one-out-of-n system until the instant of interrogation. Each signal (1 . . . n) of the system is assigned an arrangement having storage capability and comprising two inverters (i1, i2) with feedback and two series-connected transistors (t2, t3) which are both conducting at the instant of interrogation and, thus, produce an unambiguous signal level at a common load resistor (l) only if a change of state has occurred in the system. |
申请公布号 |
DE3274709(D1) |
申请公布日期 |
1987.01.22 |
申请号 |
DE19823274709 |
申请日期 |
1982.03.04 |
申请人 |
DEUTSCHE ITT INDUSTRIES GMBH;ITT INDUSTRIES INC. |
发明人 |
BACKES, REINER, DIPL.-ING. |
分类号 |
H03K19/20;G06F11/08;G06F17/40;H03K5/1534;H03M7/22;(IPC1-7):H03K5/153;H03M13/02;G06F15/20 |
主分类号 |
H03K19/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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