| 摘要 |
PURPOSE:To synthesize uniform silicon carbide powder containing a desired amount of free carbon, by controlling acetylene which is a reaction by-product on synthesizing the silicon carbide powder in the vapor phase at a high temperature. CONSTITUTION:Argon gas is introduced from a gas inlet pipe 3 for plasma to carry out electric discharge between cathode 1 and anode 2 and generated plasma. A silicon compound, e.g. silane, is then introduced from an inlet pipe 5, and a hydrocarbon, e.g. methane, is introduced from an inlet pipe 6 to synthesize silicon carbide powder in a reaction zone 4 at a high temperature. The resultant silicon carbide is recovered from a taking outlet 7. In the process, the acetylene content in the waste gas is analyzed with a quadrupole spectrometer to adjust the amount of the hydrocarbon to be introduced so as to give a constant amount of the formed acetylene in the reaction. Thereby, the aimed uniform silicon carbide powder always containing a constant amount of free carbon is synthesized. |
