| 摘要 |
PURPOSE:To obtain a high frequency high output transistor which can be readily assembled with an internal matching circuit by providing a DC blocking capacitor and a transistor chip on a grounded output side electrode layer, and further providing a conductor bridge to reduce the number of bonding wirings. CONSTITUTION:A conductor bridge 15 which brides between two points on a case 9 is provided across over a collector electrode layer 14. An MOS capacitor 2 and a transistor chip 1 are formed directly on the layer 14, which is used as a conductor instead of the conventional collector bonding wiring. The bridge 15 is disposed at near distance of the capacitor 2 and the transistor 1 as a grounding terminal equivalent to a case 9. Thus, the collector bonding wirings can be omitted with an internal matching circuit. |
