发明名称 |
METHOD FOR FORMING PATTERNED THIN FILM |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a new method for forming a patterned thin film by which a patterned thin film in a nanometer scale can be easily formed at a low cost with high controlling property. SOLUTION: In the method for forming a patterned thin film to form a patterned thin film on an insulative substrate in a precursor solution containing a film forming substance, an electrification pattern (3) is first formed on an insulative substrate (2). Then the insulative substrate (2) is immersed in a precursor solution to precipitate the film forming substance on the electrification pattern (3) formed on the substrate (2).</p> |
申请公布号 |
JP2002275636(A) |
申请公布日期 |
2002.09.25 |
申请号 |
JP20010078498 |
申请日期 |
2001.03.19 |
申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
FUDOJI HIROSHI;KOBAYASHI MIKIHIKO;SHINTANI NORIO |
分类号 |
C23C18/06;C23C2/04;C23C18/12;C23C26/00;H01C17/06;H01G4/33;H01L21/316;(IPC1-7):C23C18/06 |
主分类号 |
C23C18/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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