发明名称 METHOD FOR FORMING PATTERNED THIN FILM
摘要 <p>PROBLEM TO BE SOLVED: To provide a new method for forming a patterned thin film by which a patterned thin film in a nanometer scale can be easily formed at a low cost with high controlling property. SOLUTION: In the method for forming a patterned thin film to form a patterned thin film on an insulative substrate in a precursor solution containing a film forming substance, an electrification pattern (3) is first formed on an insulative substrate (2). Then the insulative substrate (2) is immersed in a precursor solution to precipitate the film forming substance on the electrification pattern (3) formed on the substrate (2).</p>
申请公布号 JP2002275636(A) 申请公布日期 2002.09.25
申请号 JP20010078498 申请日期 2001.03.19
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 FUDOJI HIROSHI;KOBAYASHI MIKIHIKO;SHINTANI NORIO
分类号 C23C18/06;C23C2/04;C23C18/12;C23C26/00;H01C17/06;H01G4/33;H01L21/316;(IPC1-7):C23C18/06 主分类号 C23C18/06
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