N channel MOS transistor with limitation of punch-through effect and formation process thereof.

摘要

The zone of the substrate (1) between the two source and drain areas (10,11) and the zones (9) around said areas are implanted in depth with high-concentration P dope. In this manner the possibility of punching through is greatly limited without alteration of the electrical characteristics of the transistor. The transistor can be the conventional or the LDD type.