发明名称 |
SEMICONDUCTOR DEVICE HAVING INTERCONNECTION LAYERS |
摘要 |
In order to prevent diffusion of silicon from under a titanium disilicide interconnect (1) and into an overlying aluminium layer (6), the disilicide is selectively nitrided by annealing in nitrogen at the points where interconnection between the disilicide and aluminium is required via holes (4) in a silicon dioxide layer (3). The titanium nitrode contacts (5) thus formed in a truly self-aligned manner provide a good barrier to silicon diffusion while having an acceptable low resistivity. |
申请公布号 |
EP0174773(A3) |
申请公布日期 |
1987.01.21 |
申请号 |
EP19850306106 |
申请日期 |
1985.08.29 |
申请人 |
STANDARD TELEPHONES AND CABLES PUBLIC LIMITED COMPANY |
发明人 |
SCOVELL, PETER DENIS;ROSSER, PAUL JOHN;TOMKINS, GARY JOHN |
分类号 |
H01L29/43;H01L21/28;H01L21/768;H01L23/532;(IPC1-7):H01L23/52;H01L21/90 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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