发明名称 LIQUID-PHASE EPITAXIAL GROWTH EQUIPMENT
摘要 PURPOSE:To remove a damage of a substrate due to a thermal removal by saturating a substrate burying tank under partial pressure of an element which is thermally feasibly separated from the substrate as separated from solution. CONSTITUTION:A substrate 2 is mounted on the recess 3a of a substrate mounting carbon slide member 3, and a solution holder 7 having a growing solution 6 and a substrate burying through hole 6 (in a holder 4) is mounted thereon. A solution tank 8 is disposed on the holder 4, a solution 9 which contains In or Sn as a solvent and InP as a solute is provided in the tank, and a cover 10 is placed. The InP substrate is exposed with H2 atmosphere during the growing period, but since the P is evaporated at high temperature from the solution 9 of the tank 8 and sealed, the holder 4 is filled with the partial pressure of the P. Thus, the separation of the P from the substrate 2 is enabled to be compensated in a saturated state to remove a thermal damage.
申请公布号 JPS6213020(A) 申请公布日期 1987.01.21
申请号 JP19850152675 申请日期 1985.07.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KUBO MINORU;SASAI YOICHI;OGURA MOTOTSUGU;ISHINO MASATO
分类号 H01L21/208;H01L33/30;H01S5/00 主分类号 H01L21/208
代理机构 代理人
主权项
地址