| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the production cost by r educing the number of expensive photoetching processes at the time of manufacturing a solar battery. SOLUTION: An n+ semiconductor layer 20 is formed on the surface of a p-type silicon substrate 10, and then insulating films 30 and 70 are formed on the surface and the rear of the substrate. Subsequently, an n-type impurity layer 65 is formed on the surface insulating film, and a p-type impurity layer 95 is formed on the rear insulating film respectively by printing, the impurity is diffused by heat-processing, and an n++ semiconductor layer and a p++ semiconductor layer are formed. At the same time, the surface and rear insulating films react with the n-type and p-type impurities, and a PSG film and a BSG film which have almost the same width as those of the n++ and the p++ semiconductor layers are respectively formed. Since the PSG film and the BSG film are higher in etching rate than the surface and the rear insulating films of the front and the rear surfaces, the films of PSG and BSG can be removed by only wet etching without using a further photoetching process, and contact holes for electrodes can be formed. Thereafter, surface and rear surface electrodes are respectively formed on the contact holes by wet plating.</p> |
