发明名称 |
Etching method. |
摘要 |
<p>Materials whose elemental constituents are selected from groups III and V of the Periodic Table are photochemically etched in a reducing environment. Etching is carried out by il- lurnineting a halogenated hydrocarbon gas, eg methyl iodide, with ultra-violet light in the vicinity of the material. The reducing environment is provided by the presence of sufficient hydrogen to suppress the effect of any oxygen leaking into the system.</p><p>Methods according to the invention may be used in particular in the production of opto-electronic devices.</p> |
申请公布号 |
EP0209288(A1) |
申请公布日期 |
1987.01.21 |
申请号 |
EP19860305068 |
申请日期 |
1986.06.30 |
申请人 |
BRITISH TELECOMMUNICATIONS PLC |
发明人 |
HAIGH, JOHN;AYLETT, MARTIN RICHARD |
分类号 |
H01L21/302;H01L21/268;H01L21/306;H01L21/3065 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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