| 摘要 |
PURPOSE:To obtain a gallium arsenide logic circuit with excellent yield in manufacturing integrated circuits by connecting an Esaki diode to a drive circuit element of the logic circuit so as to shunt a drive current and connecting an Esaki diode also to a load circuit element so as to shunt a load current thereby increasing the logic amplitude. CONSTITUTION:The load circuit element 2 is connected in series with the drive circuit element 1, the Esaki diode 3 is connected in parallel with the drive circuit element 1 and the Esaki diode 4 is connected in parallel with the load circuit element 2. When an input voltage to the drive circuit element 1 is a threshold voltage or below, that is, the drive circuit element 1 is in nonconductive state and the drive circuit element 1 is transited from the nonconductive state into the conductive state, the output voltage is lowered gradually, much current flows to the Esaki diode 3, a peak current IP flows with a voltage VP to quicken the operation of the state transition. Conversely, when the input voltage of the drive circuit element 1 is the threshold voltage or over at the initial state, the terminal voltage of the Esaki diode connected is lowered to quicken the transition of the logic state. |
