| 摘要 |
In one embodiment of the present invention, silicon spheres are fabricated by applying a slurry of metallurgical grade silicon, or other suitable material, on the surface of a substrate capable of maintaining integrity beyond the melting point of silicon. The layer of metallurgical grade silicon is then patterned to provide regions of metallurgical grade silicon of uniform size. The substrate and metallurgical grade silicon are then heated beyond the melting point of silicon. The metallurgical grade silicon then beads to the surface as relatively pure silicon and forms silicon spheres due to the high cohesion of silicon. The structure is then cooled below the melting point of silicon and the silicon spheres then crystallize. The silicon spheres are then removed from the surface of the substrate and are further processed using techniques disclosed in copending U.S. patent application Ser. Nos. 647,551 and 647,578 to further purify the crystalline silicon spheres.
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