发明名称 ELECTRON-BEAM EXPOSURE METHOD
摘要 PURPOSE:To prevent the generation of defective connection between patterns resulting from the nonuniformity of the temperature of a resist on a substrate by changing the quantity of the overlapping of contacting sections in response to the difference of the exposure time between contacting patterns and conducting exposure. CONSTITUTION:Since patterns 1 and 2, patterns 2 and 3,..., patterns 999 and 1000 are exposed continuously, the quantities of connection are unnecessitated approximately. Since patterns 2 and 10 are exposed after the time slightly passes, however, the pattern 10 is exposed after a temperature in the vicinity of the pattern 2 drops, the sensitivity of a resist lowers, and defective connection is generated, thus taking the quantity of overlapping corresponding to the elapsed time, then performing overlapping exposure. Since the pattern 1000 is exposed after the considerable time passes after the pattern 1 is exposed, connection is further deteriorated under the state left as it is. Consequently, the quantity of overlapping at that time is increased. Accordingly, the generation of defective connection between the patterns can be inhibited.
申请公布号 JPS6211229(A) 申请公布日期 1987.01.20
申请号 JP19850150473 申请日期 1985.07.09
申请人 FUJITSU LTD 发明人 KOBAYASHI KOICHI;YASUDA HIROSHI
分类号 H01L21/027;G03F7/20;H01J37/302;H01L21/00;H01L21/30 主分类号 H01L21/027
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