发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain connecting structure sufficiently resisting heat and pressure by forming a stress relaxation region onto an insulating film to a wiring layer from the tangential direction of a bump, a plane shape thereof takes a circle, and connecting the wiring layer to the bump through the region. CONSTITUTION:A stress relaxation region 330 extending to a wiring 230 from the tangential direction of a circle is shaped between a circular bump 130 and the wiring 230. An Au thin-layer 35 is laminated onto a Pi layer 33 in the region 330, and a thick Au layer 36 is formed onto the thin-layer 35, thus shaping the bump 130. The circular stress relaxation region displays an effect to breakdown larger than rectangular or tapered one, thus allowing joining having high quality and with high reliability on the simultaneous joining of multi-leads.
申请公布号 JPS6211253(A) 申请公布日期 1987.01.20
申请号 JP19850296893 申请日期 1985.12.27
申请人 NEC CORP 发明人 SATO SUSUMU;TSUNEMITSU HIDEO
分类号 H01L21/60 主分类号 H01L21/60
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