| 发明名称 |
Selective area III-V growth and lift-off using tungsten patterning |
| 摘要 |
A method of device fabrication using selective area regrowth Group III-V compound semiconductors with tungsten patterning is described.
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| 申请公布号 |
US4637129(A) |
申请公布日期 |
1987.01.20 |
| 申请号 |
US19840635902 |
申请日期 |
1984.07.30 |
| 申请人 |
AT&T BELL LABORATORIES |
发明人 |
DERKITS, JR., GUSTAV E.;HARBISON, JAMES P. |
| 分类号 |
H01L21/268;H01L21/033;H01L21/20;H01L21/203;H01L21/26;H01L21/285;H01L21/302;H01L21/306;H01L21/3065;H01L21/308;H01L21/311;H01L21/314;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/268 |
| 代理机构 |
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