| 摘要 |
PURPOSE:To reduce leakage currents at a high temperature by forming an insulating layer on the surface of a single crystal Si substrate and shaping a piezoresistance element on the insulating layer. CONSTITUTION:An Si dioxide layer 2a is formed on the surface of a single crystal Si substrate 1, and a metallic extremely-thin film 4 is further shaped on the layer 2a. The layer 2a and the thin-film 4 are removed while leaving only region sections, in which piezoresistance elements must be shaped, to form insular regions 2a, 4. A polycrystalline or amorphous Si layer 6 is shaped on the surface of the substrate 1. The layer 6 is melted and solidified and changed into a single crystal. Si in an unnecessary section is removed, and the insularly isolated piezoresistance elements 3 are formed. An Si dioxide film 2b is shaped through thermal oxidation to coat the elements 3. An Si dioxide layer is further formed on the layer 2b and coating is applied, a hole is bored to the layer 2b, and a metallic film is shaped, thus forming a metallization pattern with a desired pattern through etching. According to such manufacture, leakage currents at a high temperature are reduced extremely because the elements 3 are insulated by the complete insulator. |
