发明名称 Light emitting device and method of manufacturing the same
摘要 A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.
申请公布号 US7033848(B2) 申请公布日期 2006.04.25
申请号 US20050060763 申请日期 2005.02.18
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MURAKAMI SATOSHI;TAKAYAMA TORU;AKIMOTO KENGO
分类号 H01L21/00;H05B33/04;G09F9/30;H01L21/318;H01L21/461;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;H01L51/50;H01L51/52;H05B33/10 主分类号 H01L21/00
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