| 摘要 |
PURPOSE:To make a dielectric film thin and to improve quantity of accumulated electric charge, which is to become a data for data storing capacitor elements, by forming the dielectric film of each data storing capacitor element in a DRAM with a silicon nitride film or its composite film. CONSTITUTION:Each data storing capacitor element C is formed by the first capacitor element, which is composed of a semiconductor region 8, an insulating film 9, which constituted a dielectric film, and a conducting layer 10, and the second capacitor element, which is composed of a semiconductor region 5 and the semiconductor region 8. A switching MISFET Q is mainly constituted by a semiconductor substrate 1, a gate insulating film 12, a conducting layer 13A, which is used as a gate electrode, and semiconductor regions 14 and 16, which are used as a source region or a drain region. A memory cell is formed by the series circuit of the switching MISFET Q and the data storing capacitors C. |
