发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To execute the high sensitivity and the high speed of sense action by using the amplifier in which the load is an N channel current mirror circuit, as a CMOS type differential amplifier. CONSTITUTION:As a CMOS type differential amplifier 10 to compare a sense line electric potential VS with a reference electric potential Vref from a dummy circuit 9 and amplify the sense, an N channel current mirror type amplifier is used in which the load is an N channel current mirror circuit and which has differential pair transistors P3 and P4 of a P channel and a transistor P5 for a constant electric current source of the P channel. Differential pair transistors P1 and P2 and transistors N4 and N5 for the current mirror are formed to the same size, a Vcc electric power source electric potential is given to the source of a transistor P3 for the constant electric current source, and a Vss electric potential (earth electric potential) is given to the source of the transistors N4 and N5 for the current mirror.</p>
申请公布号 JPS628398(A) 申请公布日期 1987.01.16
申请号 JP19850146048 申请日期 1985.07.03
申请人 TOSHIBA CORP;TOSHIBA MICRO COMPUT ENG CORP 发明人 ATSUMI SHIGERU;TANAKA SUMIO;KAMEI TAKASHI
分类号 G11C17/00;G11C16/06;H01L27/10 主分类号 G11C17/00
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