| 摘要 |
PURPOSE:To improve integration density, by forming a resistor element in a connecting hole part in an interlayer insulating film, through which a lower siring layer and an upper wiring layer are connected, thereby omitting a region form insulating isolation. CONSTITUTION:On a semiconductor substrate 1, an interlayer insulating film 2, a lower wiring layer 3, an upper wiring layer 6, an interlayer insulating film 4 and a polycrystalline silicon 5, which is formed by doping impurities so as to form a resistor, are formed. The resistor element 5 is selectively formed only at a connecting hole part between the lower wiring layer 3 and the upper wiring layer 6, where the resistor is required in the interlayer insulating film. The resistance value can be changed by changing the size of the connecting hole, or by changing the concentration of impurities, which are doped in the polycrystalline silicon 5. |
