| 摘要 |
An I<2>L programmable read only memory (26) operates in the read mode at very low power levels and at voltages down to 1 Volt. Switching between modes is accomplished merely by changing the voltage on the B+ terminal; 1-3 Volts for the read mode and 9-12 Volts for the program mode. The memory includes a row driver circuit (e.g. 40) to sink current from a row (e.g. 60) of memory elements when selectively activated. The row driver circuit has two current sinking capabilities, a low current capability for the read mode and a high current capability for the program mode. The memory also includes an output circuit (e.g. 80) that has a selectable dual non-inverting input differential amplifier (424-440) with each non-inverting input connected to a different column (e.g. 340) of memory elements. To program the memory elements, the output circuit includes two selectable programming current sources (402-410, 412-420) which self extinguish as soon as the memory element being programmed changes from its unprogrammed to its programmed state. |
