| 摘要 |
A metal gettering method and a method for manufacturing an LCD using the same are provided to prevent a crystallized silicon layer from being oxidized, thereby improving the metal gettering effect, by forming a capping layer on the crystallized silicon layer. An amorphous silicon layer is formed on a substrate(110). The amorphous silicon is crystallized by performing a crystallizing process. A capping layer(150) is formed on the crystallized silicon layer(130a). The capping layer is oxidized. The oxidized capping layer is removed to exposure a surface of the crystallized silicon layer. The crystallizing process is performed through metal induced crystallization or metal induced lateral crystallization. |
