| 摘要 |
Procedure for fabricating devices, which involves dry etching. The presence of material deposited on the sidewall during device fabrication utilizing plasma-effected etching of semiconductor materials has significant consequences in the properties of these devices. It has been found by the present inventors that such depositions lead to a sidewall slope that, among other things, in turn produces linewidth loss. Additionally, the presence of a sloped masking material, e.g., a photoresist or sidewall deposit, produces further undesirable results. The solution is to adjust the processing so as to avoid these detrimental effects. |
