METHOD OF DETERMINING DOPE CONCENTRATION AND DEPTH OF DEPOSITION OF P-N JUNCTION OF BUILT-IN CHANNEL IN INSULATED-GATE FIELD-EFFECT TRANSISTORS,申请号SU19853889863-传众专利搜索

发明名称	METHOD OF DETERMINING DOPE CONCENTRATION AND DEPTH OF DEPOSITION OF P-N JUNCTION OF BUILT-IN CHANNEL IN INSULATED-GATE FIELD-EFFECT TRANSISTORS
摘要
申请公布号	SU1283874(A1)	申请公布日期	1987.01.15
申请号	SU19853889863	申请日期	1985.04.24
申请人	PRIGOZHIN GRIGORIJ YA,SU;SKURATOV YURIJ V,SU	发明人	PRIGOZHIN GRIGORIJ YA,SU;SKURATOV YURIJ V,SU
分类号	H01L21/66;G01R31/26	主分类号	H01L21/66
代理机构		代理人
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