| 摘要 |
1. Asymmetric thyristor with high reverse voltage strength, comprising, from its upper face to its lower face, a cathode N1 layer, a P1 gate layer, an asymmetric N2 N2**+ base layer, the higher doped N2**+ zone being located on the side of the lower face, and a P2 anode layer, characterized in that it further comprises an additional P2**- layer less doped than the N2**+ layer between the higher doped N2**+ zone and the P2 anode layer. |
