| 摘要 |
<p>A method for manufacturing a NAND flash memory device is provided to prevent a mask alignment problem and a bridge generated between contacts by using a laminated structure of a first hard mask layer which is a polysilicon layer and a second hard mask layer that is a nitride layer. An etch stop layer(102), interlayer dielectrics(104,106), a first hard mask layer, and a second hard mask layer are sequentially formed on the upper portion of a semiconductor substrate(100) having a predetermined structure. Predetermined regions of the second and first hard mask layers are etched. The interlayer dielectrics are etched by using the etched first and second hard mask layers. A drain contact hole is formed by performing a second hard mask removing process and an etching process at the same time to expose the predetermined region of the semiconductor substrate. A drain contact plug(118) is formed to gap-fill the drain contact hole.</p> |
