| 摘要 |
PURPOSE:To obtain a semiconductor device which does not decrease charge storage capacity by forming one of capacitor electrodes as a polycrystalline silicon film and the other as a high melting point metal conductor film, and electrically connecting a part of the conductor film with the source and drain regions of a silicon semiconductor substrate. CONSTITUTION:After an impurity is implanted to a silicon semiconductor substrate 1 to form an impurity diffused region 8, a W film 7 of a conductor film is formed, a silicon oxide film 3 of a high dielectric constant capacitor insulating film is formed thereon, and a polycrystalline silicon film 4 is formed further thereon. Then, a multilayer film is removed except the capacitor region, and a silicon oxide film 3 is formed on the exposed substrate 1. The film 4 is formed thereon, and the films 4, 3 except the gate region are removed. An impurity is diffused in the exposed substrate 1, a source and drain region 5 is formed, and electrically connected with one of an impurity diffused region 8 and the region 5. |
