| 摘要 |
PURPOSE:To obtain the titled film having high photoconductivity, large ratio between the photoconductivity and dark conductivity and excellent photoconductive characteristic in the titled method utilizing electron cyclotron resonance plasma by specifying a gaseous pressure and gaseous components. CONSTITUTION:The region of an electric discharge tube 4 of a vacuum chamber 3 is made larger in the magnetic field intensity than the magnetic field intensity at which electron cyclotron resonance arises. Gases are respectively supplied through an introducing port 6 into such region and through an introducing port 7 into the region where the magnetic field intensity is smaller than the above-mentioned resonance magnetic field intensity. The film forming gas contg. Si atoms is supplied through the port 7. The non-film formable gas to be supplied through the port 6 is any among Ne, Ar, Kr and Xe and is introduced at 0.05-20 times the amt. of the Si-contg. gas. The gaseous pressure during the discharge is maintained under 5X10<-5>-3X10<-2> Torr. The intended amorphous silicon film is thus formed on the substrate 8. |
