| 摘要 |
A method of manufacturing a semiconductor device, in which method a heterostructure of doped and/or undoped binary and/or ternary alloys of a II-VI ternary alloy system, e.g. Cd-Hg-Te, is grown epitaxially on a heated monocrystalline substrate (29) provided on a susceptor (5) in a reaction vessel (1). The reaction vessel contains a mercury source (2, 3), a supply of hydrogen and Et2Te is passed into the reaction vessel (1) through a tube (11), and a supply of hydrogen and Me2Cd is passed into the reaction vessel (1) through a tube (12) which ends in the reaction vessel (1) at a location between the mercury source (2, 3) and the substrate (29). The mercury source (2, 3) is heated so as to generate a partial pressure of mercury which is greater than the partial pressure of mercury generated by the mercury- containing alloy to be grown on the substrate (5). The substrate (5) is heated to such a temperature that the Et2Te and the Me2Cd decompose in the region of the substrate (5). A significant problem in growing heterostructures of alloys from the Cd-Hg-Te system is to produce heterostructure having narrow interfaces between the layers (30) and (32). After a first layer (30) has been grown on the substrate (5), the flow-rate of the hydrogen and Me2Cd passing through the tube (12) is abruptly changed by means of solenoid valves (21, 25, 22 and 28), the transit time of flow of the gas current from the valve (25 or 28) to the substrata 5 being less than 1 second. <IMAGE> |
