发明名称 |
PROCEDIMENTO PER LA FABBRICAZIONE IN FORMA IBRIDA DI CIRCUITI INTEGRATI A MICROONDE AVENTI LE STESSE PRESTAZIONI E DIMENSIONI DI QUELLI REALIZZATI IN FORMA MONOLITICA |
摘要 |
The passive circuit is-formed by deposition on an insulating or semi- insulating substrate, whereas the active components are formed separately and are subsequently fixed on to said passive circuit. |
申请公布号 |
IT1153145(B) |
申请公布日期 |
1987.01.14 |
申请号 |
IT19820022672 |
申请日期 |
1982.07.30 |
申请人 |
CISE CENTRO INFORMAZIONI STUDI ESPERIENZE SPA |
发明人 |
DONZELLI GIANPIERO |
分类号 |
H01L21/98;H01L25/16 |
主分类号 |
H01L21/98 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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